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  ams datasheet page 1 [v2-04] 2015-oct-07 document feedback as5410 3d-hall absolute linear position sensor the chip can measure magnetic field components in two different orientation directions and converts the magnetic field information into absolute posi tion informatio n. the as5410 supports absolute linear positi on measurement applications. only a simple 2-pole magnet is required as the magnetic field source. using two 3d-hall cells allows both absolute as well as differential 3d magnetic field measurement. the differential measurement makes the as5410 ideal for use in rough industrial position se nsing applications that include not only dust, dirt or moisture but also unwanted magnetic stray fields. all the signal conditioning, including compensation of temperature effects, linearization of the output is included in the ic. the absolute position informatio n of the magnet is directly accessible over a spi interface and pwm output. a cycle redundancy check (crc) allows verification of the received data. the as5410 is available in a 14-pin tssop package and is qualified for an ambient temperature range from -40c to 105c. it operates at a supply voltage of 3.3v 10%. ordering information and content guide appear at end of datasheet. general description
page 2 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? general description key benefits & features the benefits and features of as 5410, 3d-hall absolute linear position sensor are listed below: figure 1: added value of using as5410 applications as5410 is ideal for: ? plunger position ? pedal position ? pneumatic and hydraulic cylinder position ? automation with linear positi on stages through cascading of several as5410 devices. figure 2: as5410 linear position sensing of the magnet benefits features ? high flexibility in magnet selection ? wide magnetic input range ? suppression against magnetic stray fields ? dual 3d sensor pixel principle ? flexibility in choice of interface ? spi and pwm output ? contactless position sensing ? absolute linear position sensing ? flexible mechanical arrangement of magnet ? flexible configuration registers ? external calculations of raw data ? bx and bz raw data assessment possible ? high linearity after teaching ? 33 linearization points to achieve high precision ? ideal for applications in harsh environments ? integrated diagnostic functions ? temperature range from -40c to 105c (ambient)
ams datasheet page 3 [v2-04] 2015-oct-07 document feedback as5410 ? general description block diagram the functional blocks of this device are shown below. figure 3: as5410 block diagram vdd vss cs_n mosi sck miso 3dhall cell #0 x z x z m u x 3dhall cell #1 bi bj e2prom diagnostics pwm adc signal conditioning atan (cordic) linearization temperature sensor spi ready pwm state machine configuration reset_n
page 4 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? general description 3d hall cells: the as5410 contains two 3d hall cells, spaced 2.5mm apart. mux: the multiplexer selects two magnetic fi eld components bx and bz as the inputs for the cordic. the selected inputs can either be absolute sensor signals or differential sensor signals. adc: the sigma-delta adc samples the hall se nsors signals selected by the mux. the sampling of the sensors is done sequentially. signal conditioning: this block includes offset an d temperature compensation as well as amplitude matching. bi/bj values: this block represents the registers containing the input sensor signals of the cordic inputs. atan: coordinate to rotation digital computer: this block converts rectangular coordinates (sine and cosine signals from the hall sensors) into polar coordinates (angle/distance and magnitude). linearization: a 33-point linearization of the cordic output data is available to accommodate a variety of different magnet sizes and applications. temperature sensor: an on-chip temperature sensor is available. it can be read over the spi interface. this sensor is also used for signal conditioning. pwm interface: the linearized measurement data is available over a single pin in the form of a pulse width modulated (pwm) signal. spi interface: a bi-directional spi interface a llows communication with the chip, including reading measurement data, e2prom cont ents or writing configuration data. e2prom: the on-chip e2prom contains the configuration data of the chip. state machine: the state machine (sequencer) controls the automatic sequencing of measurements. once it is configured for a certain measurement, the state machine executes all necessary steps to perform a complete measurement cycle. configuration: the configuration is pre- defined in the as54 10. mode selection.
ams datasheet page 5 [v2-04] 2015-oct-07 document feedback as5410 ? pin assignment pin diagram figure 4: as5410 pin configuration, tssop-14 package (top view) note(s) and/or footnote(s): 1. x indicates the axis of lateral position measurem ent; z axis is perpendicular to the package surface pin description figure 5: pin description pin tssop symbol type description 1 pwm do pwm output. the linearized output data is available on this pin. 2 vss2 s ground (0v) (1) 3 vss1 s ground (0v) (1) 4 vdd s positive supply voltage (3.0v to 3.6v) 5 lock_n di_st test pin, must be connected to vss in normal operation 6 reset_n dio_st reset input (active low) to be connected with open drain driver. in case of output application leave open 7 ready do measurement ready signal is set high when a measurement cycle is completed and the results in the output registers are valid 8 miso do_t master in / slave out (spi interface data output) 9 mosi di_st master out / slave in (spi interface data input) 10 test dio must be connected to vss. pin assignment       





 
            as5410
page 6 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? pin assignment note(s) and/or footnote(s): 1. both vss1 and vss2 must be connected. 2. cs_n is active low and activates data transmission. if only a single device is used, cs_n may remain low for several command s, for example while reading the output registers. abbreviations for pin types in figure 5 : 11 sck di_st spi interface clock input (max. 1 mhz) 12 sce di_st test pin, must be connected to vss in normal operation 13 test di_st test pin, must be connected to vss in normal operation 14 cs_n di_st chip select (active low) do : digital output dio : digital input & output di_st : digital schmitt-trigger input do_t : digital output /tri-state s : supply pin dio_st : digital schmitt-trigger input & output pin tssop symbol type description
ams datasheet page 7 [v2-04] 2015-oct-07 document feedback as5410 ? electrical characteristics absolute maximum ratings stresses beyond those listed in absolute maximum ratings may cause permanent damage to the device. these are stress ratings only. functional operation of the device at these or any other conditions beyond those indicated in operating conditions is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. figure 6: absolute maximum ratings parameter min max unit comments dc supply voltage at pin vdd 5 v input pin voltage -0.3 vdd +0.3 v input current (latchup immunity) -100 100 ma norm: jedec 78 electrostatic discharge 2 kv norm: mil 883 e method 3015 storage temperature -55 150 c min C 67f; max 257f body temperature 260 c ipc/jedec j-std-020 lead finish 100% sn matte tin relative humidity (non-condensing) 5 85 % moisture sensitivity level (msl) 3 represents a maximum floor time of 168h eeprom read/write cycles 100 cycles electrical characteristics
page 8 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? electrical characteristics operating conditions operating conditions: operating temperature = -40c to 105c, vdd = 3.0-3.6v unless otherwise noted. figure 7: electrical characteristics system performance specifications operating conditions: magnet placement as specified in figure 2 , operating temperature = -40c to 105c, vdd = 3.0v to 3.6v, unless otherwise noted. figure 8: system parameters note(s) and/or footnote(s): 1. minimum condition is valid if bo th input components are above 5mt. 2. maximum value of 1 sigma (static variatio n). sensitivity variation absolute from part to part. better performance can be rea ched with linearization step at end of line. 3. over temperature. value in % (1 sigma). 4. configurable in register 000bh. symbol parameter min typ max unit note vdd positive supply voltage 3.0 3.3 3.6 v isupp supply current 15 ma active operation, continuous mode t amb operating ambient temperature -40 105 c -40f to 221f twu wake up time 2 ms from cold start twlp 200 s from standby; see single loop mode symbol parameter min typ max unit note b ir_x magnetic range x 5 (1) 60 mt b ir_z magnetic range z 5 (1) 50 mt s var_x sensitivity variation absolute x 1.85 (2) % s var_z sensitivity variation absolute z 1.05 (2) % dsx/dsz sensitivity ratio drift x/z 1.00 (3) % t s0 sampling rate configuration 0 (4) 11.08ms t s1 sampling rate configuration 1 (4) 22.15ms
ams datasheet page 9 [v2-04] 2015-oct-07 document feedback as5410 ? electrical characteristics dc characteristics fo r digital inputs and outputs cmos schmitt-trigger inputs : lock_n, reset_n, clk, mosi, sck, cs_n operating conditions: operating temperature = -40c to 105c, vdd = 3.0v to 3.6v unless otherwise noted. figure 9: cmos schmitt-trigger inputs note(s) and/or footnote(s): 1. input pin voltages higher than vdd (e.g. 5v ttl levels) must be limited by a series resistor to ensure that the maximum inpu t current (iin) is not exceeded. cmos outputs: ready, miso, pwm operating conditions: operating temperature = -40c to 105c, vdd = 3.0v to 3.6v unless otherwise noted. figure 10: cmos outputs: re ady, miso, pwm symbol parameter min max unit note vih high level input voltage 1.77 1.87 v vdd = 3.0v 2.07 2.23 vdd = 3.6v vil low level input voltage 1.12 1.27 v vdd = 3.0v 1.42 1.52 vdd = 3.6v i in input current 10 ma for vin >vdd (1) symbol parameter min max unit note vo h output high level 2.5 vdd v io h output current, source 8 ma vo l output low level 0 0.4 v io l output current, sink 8 ma
page 10 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? electrical characteristics power on reset operating conditions: operating temperature = -40c to 105c figure 11: power on reset reset_n the reset_n pin can work as an output to monitor the internal power on reset signal (see figure 12 ). the reset_n can also work as an input and trigger an internal reset. while power on cycle is not finished, communication is not allowed until the ready pin is high. figure 12: power on reset symbol parameter min typ max unit note v on reset threshold; vdd level rising 1.4 2.38 2.97 v v off reset threshold; vdd level falling 1.18 2.2 2.79 v tpwrmin minimum reset pulse duration 1.8 7.1 s power on reset digital block 10ko pwrn resn reset_n
ams datasheet page 11 [v2-04] 2015-oct-07 document feedback as5410 ? electrical characteristics on-chip temperature measurement the as5410 provides a linear on-chip temperature sensor which is use for automatic compensation of sensitivity and offset drifts for the hall-in-one sensors. the measured chip temperature is available in a register (0110h) and can be used for monitoring purposes. operating conditions: operating temperature = -40c to 105c figure 13: temperature sensor symbol parameter min typ max unit note d temp temperature signal at 25 0 lsb res temp resolution 185 200 210 lsb/k
page 12 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? detailed description power modes the as5410 can be configured for two power modes: ? continuous mode ? single loop mode continuous mode in this mode, the as5410 is alwa ys active. the chip continuously updates the output registers. the completion of a new measurement is signalled with pin ready. single loop mode the as5410 features an automatic power down mode. after completion of a measurement, the chip automatically suspends to standby. the spi interface remains active. the control of this mode is possible over register 000eh (see register description ). a high on the ready output indicates that a measurement is completed. the as5410 suspends to stand-by state after the ready output has been set. serial interface (spi) the spi interface provides data transfer between as5410 and the external microcontroller. the minimum number of connections between microcontroller and as5410 is three: 1. mosi: master out C slave in; data transfer from microcontroller to as5410 (write) 2. miso: master in C slave out; data transfer from as5410 to microcontroller (read) 3. sck: serial clock; data is wr itten and read with the rising edge of sck optionally, two further connections may be used: 1. cs_n: chip select; this connection is mandatory when multiple as5410 devices are connected in parallel. in electrically noisy environment it is recommended to use the cs_n connection in or der to maintain safe data transfer. for a single unit, this connection is optional as the data transmission is synchroniz ed automatically by the number of sck cycles. in this case it is recommended to verify the synchronization by crc, data readback or repeated reading and cross- checking of subsequent measurements. 2. ready: this output indicates when data is ready, it is cleared by reading data from address 0100h or 0122h. detailed description
ams datasheet page 13 [v2-04] 2015-oct-07 document feedback as5410 ? detailed description figure 14: hardware connection between as5410 and microcontroller figure 15: spi timing diagram the data bits sent to the chip via mosi and the data bits received from the chip via miso are de fined as follows (see also figure 15 ): a15 a00 : 16-bit register address w15 w00 : 16-bit write data (in write mode) x15 x00, y15 : 16-bit read data or previous command (depending on mode) r15 r0 : 16-bit read data in read mode or previous data in write mode as5410 c mosi miso sck cs_n miso mosi sck ss/ ready ready optional wiring mandatory wiring
page 14 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? detailed description figure 16: spi timing symbol parameter min typ max unit note f sck sck frequency 1 mhz t sckhi sck pulse width hi 15 ns t scklo sck pulse width lo 15 ns t cses cs_n enable setup time before sck 10 ns t cseh cs_n enable hold time after sck 10 ns t csds cs_n disable setup time before sck 10 ns t csdh cs_n disable hold time after sck 10 ns t mosis mosi setup time before sck 10 ns t mosih mosi hold time after sck 10 ns t misod miso delay after sck 10 ns t misoed miso enable delay after cs_n 10 ns t misozd miso high z delay after cs_n 10 ns t or output edge rise time 3 ns t of output edge fall time 3 ns
ams datasheet page 15 [v2-04] 2015-oct-07 document feedback as5410 ? detailed description data transfer between as5410 and microcontroller data is transferred to the as5410 via the mosi pin (master out C slave in) with the rising edge of sck. data is read from the as5410 from the miso pin (master in C slave out) with the rising edge of sck. the data format consists of data streams with 32 bit in length. the first 16 bits define a 16-bit address and the subsequent 16 bits contain read or write data. the msb of the address word a<15> defines the direction of data transfer: a<15> = 0 read; data transfer from as5410 to microcontroller; read measurement data a<15> = 1 write; data transfer from microcontroller to as5410; write configuration data figure 17: data transfer between as5410 and microcontroller read mode for reading a register, the 16-bit read address (with a<15>=0) is sent to the mosi pin. after 16 sck cycles, data of the specified address is read from the miso pin (see figure 17 ). at the same time, the new address may be clocked into the mosi pin. miso ?0" + 15-bit address data 1 data 2 mosi miso read mode ?0" + 15-bit address ?0" + 15-bit address ?1" + 15-bit address previous command write mode & readback data 1 ?1" + 15-bit address previous command data 2 data 1 mosi
page 16 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? detailed description continuous measurement it is possible to continuously read data from the as5410 even if a new measurement is not yet finished. in this case, the last measurement data will be read. as soon as a new measurement is completed, it will be available at the spi interface. write mode and readback for additional safety and dete ction of communication errors, the actual contents of a register may be read at the same time as new data is written to this register. in case of a write command, the 16-bit write address (with a<15>=1) is sent to the mosi pin. after 16 sck cycles, data following the address bits is written to the specified address via mosi in (see figure 17 ) at the same time, the present data of that register may be read from the miso pin. following the 16-bit of data (data 1 in figure 17 ), a new address may be written to the as5410. while the new address is written, the address from the previous command is available at the miso output. checksum to avoid reading errors, the ic calculates a checksum at every read cycle from the register content. the checksum value is built by an xor operation of the previous checksum value and the read register content. the crc is calculated every time a register is read. by choosing how often the checksum is read and rechecked by the master it is possible to ad just the communication speed and safety level. the checksum value is stored in register 0108h (see register description ).
ams datasheet page 17 [v2-04] 2015-oct-07 document feedback as5410 ? detailed description pwm data transmission in addition to the spi interface, the as5410 offers a pwm output that provides data transmission of the linearized output data over a single wire. the base frequency of the pwm is the system clock frequency, so one pwm digit always corresponds to approx. 125ns. the pwm resolution is set by 3 bits (pwmprescale) which shift the 16 bit wide angle value by 0 to 7 digits. the duty cycle of the pwm signal lies between 0% to 100%. in case of an error, the duty cycle is 0%. if register 0122h value increases the duty cycle decreases. if register 0122h value decreases the duty cycle increases. figure 18: register 000dh figure 19: single pin data transmission connection diagram register access bit function default note 000dh: pwm settings r/w d15-10 pwmlimithi <5:0> 0 pwm limit high, limits the pwm duty cycle to a maximum value d9-4 pwmlimitlo <5:0> 0 pwm limit low, limits the pwm duty cycle to a minimum value d3 pwmen 0 pwm enable, enables the pwm output d2-0 pwmprescale <2:0> 0 pwm prescale, sets pwm frequency and resolution as5410 c pwm pwm vdd vdd vss gnd vdd= 3.0 - 3.6v 100nf
page 18 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? detailed description figure 20: pwm duty cycle information between 0% to 100% the duty cycle is linear to the linear angle. pwm enable: must be set high to enable the pwm mode. pwmprescale0 to pwmprescale3: the pwm resolution is set by those 3 bits. figure 21: pwm resolution pwmlimithi5 to pwmlimithi0: limits the pwm duty cycle. figure 22: pwm upper clamping limits pwm duty cycle [%] register 122h (linear angle) [lsb] 0 32767 50 0 100 -32768 pwmprescale0 to pwmprescale3 resolution (bit) pwm (khz) 000 16 0.122 001 15 0.244 010 14 0.488 011 13 0.977 100 12 1.953 101 11 3.906 110 10 7.813 111 9 15.63 duty cycle pwmlimithi0 to pwmlimithi5 minimum 50% 000000 minimum 0% 111111
ams datasheet page 19 [v2-04] 2015-oct-07 document feedback between 0% to 50% the duty cycle limit is linear to the binary values selected by pwml imithi5 to pwmlimithi0. the limits are clamping limits (by selecting limits the resolution decreases). pwmlimitlo5 to pwmlimitlo0: limits the pwm duty cycle. figure 23: pwm lower clamping limits between 50% to 100% the duty cycl e limit is linear to the binary values selected by pwmlimitlo5 to pwmlimitlo0. the limits are clamping limits (by selecting limits the resolution decreases). figure 24: pwm setting example duty cycle pwmlimitlo0 to pwmlimitlo5 maximum 50% 111111 maximum 100% 000000 clamping range 0% ? 100% pwm duty cycle 10% ? 90% pwm duty cycle 50% ? 50% pwm duty cycle pwmlimithi5 1 1 0 pwmlimithi4 1 1 0 pwmlimithi3 1 0 0 pwmlimithi2 1 0 0 pwmlimithi1 1 1 0 pwmlimithi0 1 0 0 pwmlimitlo5 0 0 1 pwmlimitlo4 0 0 1 pwmlimitlo3 0 1 1 pwmlimitlo2 0 1 1 pwmlimitlo1 0 0 1 pwmlimitlo0 0 1 1
page 20 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description the following registers can be addressed by the user via the spi interface. each register is 16-bit wide. registers not listed in the table below must not be modified from their factory programmed setting. note(s): r are reserved bits, they must not be modified (unless otherwise noted) register 000bh this register controls the sequencer figure 25: register 000bh register access bit function default note 000bh: sequencer control r/w d15 (msb) r 0 d14 r 0 d13 r 0 d12 r 0 d11 mgrangext 0 magnet range extension enable the algorithm for an extended position range. 1 = magnet range extension enabled 0 = magnet range extension disabled d10 coordsel 0 ? coordinate system selection 1 = the sign of the lin ang (register 0122h) gets changed if magdir (register 000bh) = 1 0 = lin ang (register 0122h) gets not changed d9 r 0 d8 r 0 d7 table select 0 0 these bits allow the selection of 4 different operating modes, stored in 4 individual sequencer tables d6 table select 1 0 d5 magdir 0 this bit allows to switch the magnet direction magdir = 0: north pole must point in +x direction (pin 7 to pin1) default/powerup mode. magdir = 1: north pole must point in -x direction (pin1 to pin7). preferred orientation to permit use of coordsel bit. register description
ams datasheet page 21 [v2-04] 2015-oct-07 document feedback as5410 ? register description note(s) and/or footnote(s): 1. a 10k pull down resistor is mandatory at the common ready signal line if rdyhz = 1. figure 26: possible table selection 000bh: sequencer control r/w d4 diffmd 0 differential mode: 0 = absolute measurement of hall cells, 1 = differential measurement of hall cells d3 r 0 d2 r 0 d1 rdyhz 0 ready tri-state: 0: the ready pin is always active. it must not be connected in parallel 1: the ready output may be connected in parallel. it is normally in high z and only active (high) if the ic is selected. (1) d0 (lsb) r 0 table 0 table 1 table 2 table 3 differential mode absolute pixel1 1khz sample rate 0.5khz sample rate 1khz sample rate 0.5khz sample rate cordic input values pixelcell0, bz0 = 0x112h -pixelcell1, bz1 = 0x111h pixelcell0, bx0 = 0x114h -pixelcell1, bx1 = 0x113h pixelcell0, bz0 = 0x112h -pixelcell1, bz1 = 0x111h pixelcell0, bx0 = 0x114h -pixelcell1, bx1 = 0x113h pixelcell1, bz1 = 0x111h pixelcell1, bx1 = 0x113h pixelcell1, bz1 = 0x111h pixelcell1, bx1 = 0x113h register b settings table select 1 table select 0 = 00 (mandatory) diffmd = 1 (mandatory) mgrangext = 0 or 1 depending on application table select 1 table select 0 = 01 (mandatory) diffmd = 1 (mandatory) mgrangext = 0 or 1 depending on application table select 1 table select 0 = 10 (mandatory) diffmd = 0 (mandatory) mgrangext = 0 (mandatory) table select 1 table select 0 = 11 (mandatory) diffmd = 0 (mandatory) mgrangext = 0 (mandatory) register access bit function default note
page 22 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 000dh figure 27: register 000dh register 000eh this register holds the sequencer control bits. figure 28: register 000eh register access bit function default note 000dh: r/w d15 (msb) pwmlimithi 5 1 pwm limit high, limits the pwm duty cycle to a maximum value d14 pwmlimithi 4 1 d13 pwmlimithi 3 0 d12 pwmlimithi 2 0 d11 pwmlimithi 1 1 d10 pwmlimithi 0 1 d9 pwmlimitlo 5 0 pwm limit low, limits the pwm duty cycle to a minimum value d8 pwmlimitlo 4 0 d7 pwmlimitlo 3 1 d6 pwmlimitlo 2 1 d5 pwmlimitlo 1 0 d4 pwmlimitlo 0 1 d3 pwmen 0 pwm enable, enables the pwm output d2 pwm prescale 2 0 pwm prescale, sets pwm frequency and resolution d1 pwm prescale 1 1 d0 (lsb) pwm prescale 0 1 register access bit function default note 000eh: sequencer control r/w d15 (msb) C d2 r 0 d1 seq 1 1 = sequencer enabled (to be set to activate the state machine) 0 = sequencer disabled d0 (lsb) sl 0 1 = single loop mode enabled 0 = single loop mode disabled
ams datasheet page 23 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 000fh this register holds the threshol d and hysteresis of the cordic magnitude value (see register 0120h ), at which the magnet lost flag in register 0107h is set/cleared. figure 29: register 000fh note(s) and/or footnote(s): 1. v7 to v0: the minimum allowed magnitude of cordic can be selected . the binary number, represented by v7 to v0 must be multiplied with 64 to calculate the minimum allowed magnitude of cordic. register access bit function default note 000fh: r/w d15 (msb) r 0 reserved d14 r 0 d13 r 0 d12 r 0 d11 r 0 h2 hyst 0 hysteresis for magnet lost h1 hyst 0 h0 hyst 1 v7 mgnlostlmt 0 magnet lost threshold value compared to register 0121h v6 mgnlostlmt 0 v5 mgnlostlmt 0 v4 mgnlostlmt 0 v3 mgnlostlmt 0 v2 mgnlostlmt 0 v1 mgnlostlmt 1 v0 (lsb) mgnlostlmt 1
page 24 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description figure 30: example: select v0 and v1. the corresponding dual number to 00000011 is 3 this number multiplied with 64 is the minimum allowed magnitude of cordic. 64 * 3 = 192 = threshold limit if the magnitude of cordic turn s under 192 the maglost bit in register 0107h will turn form 0 to 1. h2h0: the hysteresis around the minimum allowed magnitude of cordic can be selected. the hysteresis hystd is calculated by the formula figure 31: example: select h0 now the maglost bit in register 0107h will turn form 0 to 1 at a magnitude of cordic value lower than 192. after the maglost bit is 0 it turns back to 1 at a value higher than 288, because 192 + 96 = 288. binary decimal v7 v6 v5 v4 v3 v2 v1 v0 0000001 1 3 hyst : hysteresis value in register 000fh hystd : decimal hysteresis value around the minimum allowed magnitude of cordic mgnlostlmt : the threshold limit as calculated in the example above. binary decimal h2 h1 h0 00 1 1 (eq1) hystd mgnlostlmt 1 2 hyst ------------ - = (eq2) hystd mgnlostlmt 1 2 hyst ------------ - 192 1 2 1 ----- 96 ===
ams datasheet page 25 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0030h e2prom address figure 32: register 0030h note(s) and/or footnote(s): 1. 1lsb=4mt. register access bit function note 0030h: e2prom address r/w d15 (msb) a15 to read/write e2prom contents, the selected e2prom addre ss must be specified in this register. the corresponding data is available in register 0031h. for write operations, status bit ed in register 0107h which indicates the complet ion of a write operation must be verified before starting a new write cycle. writing 16 bits of data requires ~10ms d14 a14 d13 a13 d12 a12 d11 a11 d10 a10 d9 a9 d8 a8 d7 a7 d6 a6 d5 a5 d4 a4 d3 a3 d2 a2 d1 a1 d0 (lsb) a0
page 26 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0031h e2prom data figure 33: register 0031h register access bit function note 0031h: e2prom data r/w d15 (msb) d15 this register holds the e2prom contents of the address selected in register 0030h d14 d14 d13 d13 d12 d12 d11 d11 d10 d10 d9 d9 d8 d8 d7 d7 d6 d6 d5 d5 d4 d4 d3 d3 d2 d2 d1 d1 d0 (lsb) d0
ams datasheet page 27 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0032h figure 34: register 0032h register access bit function note 0032h: page write e2prom address r/w d15 (msb) a15 to page write e2prom contents, the selected e2prom address must be specified in this register. d14 a14 d13 a13 d12 a12 d11 a11 d10 a10 d9 a9 d8 a8 d7 a7 d6 a6 d5 a5 d4 a4 d3 a3 d2 a2 d1 a1 d0 (lsb) a0
page 28 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0033h figure 35: register 0033h register access bit function note 0033h: page write e2prom data r/w d15 (msb) d15 to page write e2prom contents, the e2prom data must be specified in this register. d14 d14 d13 d13 d12 d12 d11 d11 d10 d10 d9 d9 d8 d8 d7 d7 d6 d6 d5 d5 d4 d4 d3 d3 d2 d2 d1 d1 d0 (lsb) d0
ams datasheet page 29 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0107h status register; this register holds various status flags figure 36: register 0107h register access bit function note 0107h: status r d15 (msb) rdy indicates completion of a new measurement; same function as the ready output pin. 0 = calculation is in progress or chip not ready 1 = measurement completed, new measurement data is stored in register 0110h-0114h and 0120h-0122h d14 maglost 1 = magnetic field values are too low for position measurement; the threshold level can be selected at register 000fh bit d7 to d0 d13 corrovfl ambiguous angle correction overflow d12 normovfl normalizing scale overflow d11 sensovfl overflow during sensitivity correction over temperature d10 rngwarn adc overflow d9 histwarn histogram failure during adc operation d8 calcerror or wired combination of rngwarn, histwarn, normovfl, sensovfl d7 d7 reserved d6 d6 reserved d5 d5 reserved d4 d4 reserved d3 d3 reserved d2 d2 reserved d1 magdir detected or chosen orientation of magnet d0 (lsb) ed e2prom write cycle: 0 = e2prom write cycle in progress 1= e2prom write cycle completed
page 30 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0108h cycle redundancy check (crc): figure 37: register 0108h register access bit function note 0108h: crc r d15 (msb) crc15 checksum reading check d14 crc14 d13 crc13 d12 crc12 d11 crc11 d10 crc10 d9 crc9 d8 crc8 d7 crc7 d6 crc6 d5 crc5 d4 crc4 d3 crc3 d2 crc2 d1 crc1 d0 (lsb) crc0
ams datasheet page 31 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0110h on-chip temperature sensor figure 38: register 0110h register access bit function note 0110h: temperature r d15 (msb) t15 on-chip temperature sensor temperature [c] = (register 0110h / 200) + 25 d14 14 d13 t13 d12 t12 d11 t11 d10 t10 d9 t9 d8 t8 d7 t7 d6 t6 d5 t5 d4 t4 d3 t3 d2 t2 d1 t1 d0 (lsb) t0
page 32 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0111h magnetic field of pixel cell 1; z field sensor cell figure 39: register 0111h register access bit function note 0111h: magnetic field value r d15 (msb) bz1 magnetic field bz of pixel-cell 1 (1lsb=~4mt) d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb)
ams datasheet page 33 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0112h magnetic field of pixel cell 0; z field sensor cell figure 40: register 0112h register access bit function note 0112h: magnetic field value r d15 (msb) bz0 magnetic field bz of pixel-cell 0 (1lsb=~4mt) d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb)
page 34 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0113h magnetic field of pixel cell 1; x field sensor cell figure 41: register 0113h register access bit function note 0113h: magnetic field value r d15 (msb) bx1 magnetic field bx of pixel-cell 1 (1lsb=~4mt) d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb)
ams datasheet page 35 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0114h magnetic field of pixel cell 0; x field sensor cell figure 42: register 0114h register access bit function note 0114h: magnetic field value r d15 (msb) bx0 magnetic field bx of pixel-cell 0 (1lsb=~4mt) d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb)
page 36 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0120h cordic magnitude value; this is representing the strength of the magnetic field, as calculated by the cordic. these values may for example be used to check the magnet for out-of-range conditions, or to issue a weak magnetic field warning when the value gets below a certain threshold. figure 43: register 0120h register access bit function note 0120h: magnitude r d15 (msb) mag magnitude value of cordic calculation in absolute mode (diffmd = 0) see eq 3 calculation in differential mode (diffmd = 1) see eq 4 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb) (eq3) 0120h 0.82338 0111h 2 0113h 2 + = (eq4) 0120h 0.82338 0112h 0111h ? () 2 0114h 0113h ? () 2 + =
ams datasheet page 37 [v2-04] 2015-oct-07 document feedback as5410 ? register description register 0121h cordic angle value; this is representing the (non-linearized) angle or direction of the magnetic field, as calculated by the cordic. figure 44: register 0121h register access bit function note 0121h: angle r d15 (msb) ang ang []angle value of cordic [] 0121 h angle value of cordic [lsb] mgrangext = 0: see eq 5 mgrangext = 1: see eq 6 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb) (eq5) ang [] 360 65536 -------------- - 0121h = (eq6) ang [] 576 65536 -------------- - 0121h =
page 38 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description register 0122h this register holds the final, calculated and linearized position information figure 45: register 0122h register access bit function note 0122h: position r d15 (msb) linang this register holds the linearized 16-bit position information. linang []linearized 16-bit position information [ ] 0121 h linearized 16-bit position information [lsb] mgrangext = 0: see eq 7 mgrangext = 1: see eq 8 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (lsb) (eq7) linang [] 360 65536 -------------- - 0122h = (eq8) linang [] 576 65536 -------------- - 0122h =
ams datasheet page 39 [v2-04] 2015-oct-07 document feedback as5410 ? register description e2prom as5410 is equipped with a 1kx8 e2prom memory to store the factory settings and the customer configuration data. the device can be configured using the 4wire serial peripheral interface (spi). figure 46: e2prom memory map address (hex) e2prom location name notes 000bh sequencer control 000dh pwm configuration 000fh magnet lost threshold and hysteresis 005fh angle linearization table entry 16 applied to cordic output 0060h angle linearization table entry 0 0061h angle linearization table entry 1 0062h angle linearization table entry 2 0063h angle linearization table entry 3 0064h angle linearization table entry 4 0065h angle linearization table entry 5 0066h angle linearization table entry 6 0067h angle linearization table entry 7 0068h angle linearization table entry 8 0069h angle linearization table entry 9 006ah angle linearization table entry 10 006bh angle linearization table entry 11 006ch angle linearization table entry 12 006dh angle linearization table entry 13 006eh angle linearization table entry 14 006fh angle linearization table entry 15 0070h angle linearization table entry -16 0071h angle linearization table entry -15 0072h angle linearization table entry -14 0073h angle linearization table entry -13
page 40 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description note(s) and/or footnote(s): 1. the angle linearization points can be used to achieve higher precision at the angle output. 0074h angle linearization table entry -12 applied to cordic output 0075h angle linearization table entry -11 0076h angle linearization table entry -10 0077h angle linearization table entry -9 0078h angle linearization table entry -8 0079h angle linearization table entry -7 007ah angle linearization table entry -6 007bh angle linearization table entry -5 007ch angle linearization table entry -4 007dh angle linearization table entry -3 007eh angle linearization table entry -2 007fh angle linearization table entry -1 address (hex) e2prom location name notes
ams datasheet page 41 [v2-04] 2015-oct-07 document feedback as5410 ? register description e2prom write/read figure 47: e2prom write/read cycle for reading from the e2prom the e2prom address is written to register 0030h and the stored e2prom data can be read from register 0031h. for writing to the e2prom the e2 prom address is written to register 0030h and the e2prom data can be written to register 0031h. the write cycle is co mpleted when the ed (e2prom done) bit is set to 1. disable sequencer by setting bit 1"seq? in register 000eh to 0. write eeprom address to register 0030h write eeprom data to register 0031h reset as5410 at pin reset_n read register 0107h bit 0 ?ed? ed = 0 disable sequencer by setting bit 1 in register 000eh to 0. write eeprom address to register 0030h read register 0031h to read the value standing in eeprom data ed = 1 write eeprom read eeprom
page 42 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? register description e2prom page write figure 48: page e2prom write cycle disable sequencer by setting bit 1"seq? in register 000eh to 0. write eeprom address + k to register 0032h write eeprom data + k to register 0033h reset as5410 at pin reset_n read register 0107h bit 0 ?ed? ed = 0 ed = 1 page write eeprom write eeprom address + k to register 0032h write eeprom data + k to register 0031h k=k+1 k<7 k=7 wait 10ms
ams datasheet page 43 [v2-04] 2015-oct-07 document feedback as5410 ? register description figure 49: e2prom page index in order to write e2prom content faster it is possible to use page write. a page is 8 words of 16bit width tall and can be stored in the e2prom during one write cycle. for page writing to the e2prom the first 7 e2prom addresses of one page are written to register 0032h and the appropriate e2prom data can be written to register 0033h. the 8 th eeprom address of the page is written to register 0032h and the appropriate e2prom data can be written to register 0031h. (note: first 7 th data parts are stored to the volatile memory. only a write to register 0031h initiates the load cycle and the data is stored in the e2prom.) the write cycle is completed when the ed (e2prom done) bit is set to 1. page address 0 0000h-0007h 1 0008h-000fh 2 0010h-0017h 64 01f8h-01ffh
page 44 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? magnet features magnet range extension if the magnet is far away from the sensor, the field vectors in the sensor position can generate false angle information. by exploiting the magnetic field behavior it is still possible to calculate correct position informat ion. as absolute field values are used during this calculation external disturbance fields must not exceed a maximum of approximately ten times the terrestrial magnetic field. the position range extending calculation method can be disabled if large disturbance fields occur during operation. mgrangext = 0: angles between -180 and +180 can be measured mgrangext = 1: angles between -288 and +288 can be measured figure 50: register 000bh note(s) and/or footnote(s): 1. pins lock_n and sce are test pins for factory testing. they must be connected to vss in normal operation to prevent accident al enabling of a test mode 2. output ready is set high when a measur ement cycle is completed and the results in the output registers are valid. it is clea red by reading data from address 0100h or 0122h 3. clk allows monitoring of the internal clock or applying an external clock. 4. output miso is only activate d when cs_n is low. it is in high impedance state otherwise, this allows parallel operation of m ultiple ics. 5. cs_n is active low and activates data transmission. if only a single device is used, cs_n may remain low for several command s, for example while reading the output registers. register access bit function note 000bh: sequencer control r/w d11 mgrangext m a g net rang e ext ension enable the algorithm for an extended position range. d10 coordsel coord inate system sel ection 1 = the sign of the linang (register 0122h) gets changed if magdir (register 000bh) = 1 0 = linang (register 0122h) gets not changed magnet features
ams datasheet page 45 [v2-04] 2015-oct-07 document feedback as5410 ? application information the as5410 can be used in linear sensing applications. figure 51: reference setup for absolute linear displacement measurement application information side view: x-axis, tssop-14: top view, tssop14: as5401a -x x 20mm 20mm s side view: y-axis, tssop-14: n s n pin 1 indicator
page 46 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? application information sensor placement two pixel cells each with an x-/z-sensor are arranged in a line on the x axis parallel to the chip edge, 2.5mm distant from each other. pixel positions relative to chip centre are: pixel 0: -1250 m pixel 1: 1250 m figure 52: pixel cell arrangement 3d  hall  pixel  0 3d  hall  pixel  1 2.5  mm 1.25  mm 1.25  mm 1 tolerance:   0.235  mm tolerance:   0.235  mm
ams datasheet page 47 [v2-04] 2015-oct-07 document feedback as5410 ? package drawings & markings figure 53: pixel cell placement note(s) and/or footnote(s): 1. all dimensions in mm. 2. die thickness 203 m nom. 3. adhesive thickness 30 15 m. 4. leadframe downest 152 25 m. 5. leadframe thickness 125 8 m. package drawings & markings
page 48 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? package drawings & markings figure 54: 14-lead thin shrink small outline package tssop-14 note(s) and/or footnote(s): 1. dimensioning and tolerancing conform to asme y14.5m-1994. 2. all dimensions are in millimeters (angles are in degrees). 3. n is the total number of terminals. green rohs symbol min typ max a - - 1.20 a1 0.05 - 0.15 a2 0.80 1.00 1.05 b 0.19 - 0.30 c 0.09 - 0.20 d 4.90 5.00 5.10 e6.40 bsc e1 4.30 4.40 4.50 e0.65 bsc l 0.45 0.60 0.75 l1 1.00 ref symbol min typ max r0.09-- r1 0.09 - - s0.20-- 1 0 - 8 2 12 ref 312 ref aaa - 0.10 - bbb - 0.10 - ccc - 0.05 - ddd - 0.20 - n14
ams datasheet page 49 [v2-04] 2015-oct-07 document feedback as5410 ? package drawings & markings figure 55: as5410 marking figure 56: packaging code: yywwmzz@ yy ww m zz @ year manufacturing week plant identifier free choice/traceability code sublot identifier
page 50 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? ordering & contact information the devices are available as standard products, shown in figure 57 . figure 57: ordering information buy our products or get free samples online at: www.ams.com/icdirect technical support is available at: www.ams.com/technical-support provide feedback about this document at: www.ams.com/document-feedback for further information and requests, e-mail us at: ams_sales@ams.com for sales offices, distributors and representatives, please visit: www.ams.com/contact headquarters ams ag tobelbaderstrasse 30 8141 unterpremstaetten austria, europe tel: +43 (0) 3136 500 0 website: www.ams.com model package marking delivery form delivery quantity as5410-ztst tssop-14 as5410 13" tape & reel in dry pack 4500 AS5410-ZTSM tssop-14 as5410 7" tape & reel in dry pack 500 ordering & contact information
ams datasheet page 51 [v2-04] 2015-oct-07 document feedback as5410 ? rohs compliant & ams green statement rohs: the term rohs compliant means that ams ag products fully comply with current rohs directives. our semiconductor products do not contain any chemicals for all 6 substance categories, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, rohs compliant products are suitable for use in specif ied lead-free processes. ams green (rohs compliant and no sb/br): ams green defines that in addition to rohs compliance, our products are free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material). important information: the information provided in this statement represents ams ag knowledge and belief as of the date that it is provided. ams ag bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are unde rway to better integrate information from third parties. ams ag has taken and continues to take reasonable steps to prov ide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ams ag and ams ag suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. rohs compliant & ams green statement
page 52 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? copyrights & disclaimer copyright ams ag, tobelb ader strasse 30, 8141 unterpremstaetten, austria-europe. trademarks registered. all rights reserved. the material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. devices sold by ams ag are covered by the warranty and patent indemnification provisions appe aring in its general terms of trade. ams ag makes no warranty, express, statutory, implied, or by description regarding th e information set forth herein. ams ag reserves the right to ch ange specifications and prices at any time and without notice. therefore, prior to designing this product into a system, it is necessary to check with ams ag for current information. this product is intended for use in commercial applications. applications requiring extended temperature range, unusual environmental requirements, or high reliability applications , such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by ams ag for each application. this product is provided by ams ag as is and any express or implied wa rranties, including, but not limited to the implied warranties of merchantability and fitness for a particular purpose are disclaimed. ams ag shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. no obligation or liability to recipient or any th ird party shall arise or flow out of ams ag rendering of technical or other services. copyrights & disclaimer
ams datasheet page 53 [v2-04] 2015-oct-07 document feedback as5410 ? document status document status product status definition product preview pre-development information in this datasheet is based on product ideas in the planning phase of development. all specifications are design goals without any warranty and are subject to change without notice preliminary datasheet pre-production information in this datasheet is based on products in the design, validation or qualific ation phase of development. the performance and parameters shown in this document are preliminary without any warranty and are subject to change without notice datasheet production information in this datashee t is based on products in ramp-up to full production or full production which conform to specifications in accordance with the terms of ams ag standard warranty as given in the general terms of trade datasheet (discontinued) discontinued information in this datasheet is based on products which conform to specifications in accordance with the terms of ams ag standard warranty as given in the general terms of trade, but these products have been superseded and should not be used for new designs document status
page 54 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? revision information note(s) and/or footnote(s): 1. page and figure numbers for the previous version may di ffer from page and figure numbers in the current revision 2. correction of typographical er rors is not explicitly mentioned. changes from 2.1 (2015-aug-15) to current revision 2-04 (2015-oct-07) page 2.1 (2015-aug-15) to 2-01 (2015-aug-28) content was updated to the latest ams design, altered content structure added figures 53 and 54 49 2-01 (2015-aug-28) to 2-02 (2015-sep-18) removed e2prom linearization table 005fh to 007fh updated general description section 1 updated pin assignment section 5 updated electrical char acteristics section 7 updated figure 14 13 updated figure 17 15 updated figure 18 17 updated figure 19 17 updated figure 32 and added note under it 25 added registers 0032h and 0033h 27; 28 updated figure 39 32 updated figure 40 33 updated figure 41 34 updated figure 42 35 added e2prom section 39 2-02 (2015-sep-18) to 2-03 (2015-sep-30) updated figure 6 7 2-03 (2015-sep-30) to 2-04 (2015-oct-07) updated figure 15 13 updated figure 16 14 updated figure 19 17 revision information
ams datasheet page 55 [v2-04] 2015-oct-07 document feedback as5410 ? content guide 1 general description 2 key benefits & features 2 applications 3 block diagram 5 pin assignment 5pin diagram 5 pin description 7 electrical characteristics 7 absolute maximum ratings 8 operating conditions 8 system performance specifications 9 dc characteristics for di gital inputs and outputs 9 cmos schmitt-trigger inputs: lock_n, reset_n, clk, mosi, sck, cs_n 9 cmos outputs: ready, miso, pwm 10 power on reset 10 reset_n 11 on-chip temperature measurement 12 detailed description 12 power modes 12 continuous mode 12 single loop mode 12 serial interface (spi) 15 data transfer between as5410 and microcontroller 15 read mode 16 continuous measurement 16 write mode and readback 16 checksum 17 pwm data transmission 20 register description 20 register 000bh 22 register 000dh 22 register 000eh 23 register 000fh 25 register 0030h 26 register 0031h 27 register 0032h 28 register 0033h 29 register 0107h 30 register 0108h 31 register 0110h 32 register 0111h 33 register 0112h 34 register 0113h 35 register 0114h 36 register 0120h 37 register 0121h 38 register 0122h 39 e2prom 41 e2prom write/read 42 e2prom page write content guide
page 56 ams datasheet document feedback [v2-04] 2015-oct-07 as5410 ? content guide 44 magnet features 44 magnet range extension 45 application information 46 sensor placement 47 package drawings & markings 50 ordering & contact information 51 rohs compliant & ams green statement 52 copyrights & disclaimer 53 document status 54 revision information


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